Singapore University of Social Sciences

Semiconductor Devices (ENG325)

Synopsis

This course covers the principles of operation of various semiconductor electronic and photonic devices, and their fabrication and applications. Topics include the fundamental physical principles of semiconductor/metal contacts/junctions, the use of mathematical models to describe the physical behaviour of BJTs, MOSFETs and junction FETs, and the operation and construction of optoelectronic devices (LEDs and solar cells).

Level: 3
Credit Units: 5
Presentation Pattern: Every January

Topics

  • P-N junction in equilibrium, P-N junction under forward bias
  • P-N junction under reverse bias, Capacitance in P-N junctions
  • Reverse breakdown in P-N junctions, Metal-semiconductor contacts
  • Light emitting diodes & photovoltaic devices
  • Bipolar junction devices
  • Junction field effect transistors [JFET] & metal-oxide-semiconductor FET [MOSFET]

Learning Outcome

  • Discuss the fundamentals of semiconductor devices such as pn junction, bipolar junction transistors, field effect transistors, light emitting diodes and photovoltaic devices.
  • Illustrate the breakdown mechanism in pn junctions and the characteristics of the different metal semiconductor contacts.
  • Apply suitable mathematical model to study the performance of semiconductor devices.
  • Appraise the circuit parameters for the transistor’s different operational modes.
  • Assess the impact of change in bias voltage, temperature, size and other parameters on the functioning of semiconductor devices.
  • Calculate bias voltage, mole fraction, size, current flow, voltage, resistance and other parameters associated with semiconductor devices.
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